Growth of GaAsBi for the development of photoconductive antennas for terahertz wave detection

DOI
  • TOMINAGA Yoriko
    Graduate School of Advanced Science and Engineering, Hiroshima University

Bibliographic Information

Other Title
  • テラヘルツ波検出用光伝導アンテナ開発に向けた GaAsBi 成長

Abstract

<p>Bismide (Bi) III-V semi-metallic semiconductor compounds (hereafter referred to as Bi-based III-V semiconductors) require low-temperature growth to incorporate Bi atoms into matrix crystals such as GaAs and InAs. In this study, the author’s research group aims to utilize both the growth conditions and the physical properties of Bi-based III-V semiconductors for application to photoconductive antennas for terahertz (THz) wave emission and detection at THz time-domain spectroscopy, where light sources locating at optical communication band can be used. For this purpose, the author reports here her group’s current research results on low-temperature growth of GaAs1-xBix using molecular beam epitaxy.</p>

Journal

  • Oyo Buturi

    Oyo Buturi 92 (10), 617-621, 2023-10-01

    The Japan Society of Applied Physics

Details 詳細情報について

  • CRID
    1390860609162779904
  • DOI
    10.11470/oubutsu.92.10_617
  • ISSN
    21882290
    03698009
  • Text Lang
    ja
  • Data Source
    • JaLC
  • Abstract License Flag
    Disallowed

Report a problem

Back to top