Growth of GaAsBi for the development of photoconductive antennas for terahertz wave detection
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- TOMINAGA Yoriko
- Graduate School of Advanced Science and Engineering, Hiroshima University
Bibliographic Information
- Other Title
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- テラヘルツ波検出用光伝導アンテナ開発に向けた GaAsBi 成長
Abstract
<p>Bismide (Bi) III-V semi-metallic semiconductor compounds (hereafter referred to as Bi-based III-V semiconductors) require low-temperature growth to incorporate Bi atoms into matrix crystals such as GaAs and InAs. In this study, the author’s research group aims to utilize both the growth conditions and the physical properties of Bi-based III-V semiconductors for application to photoconductive antennas for terahertz (THz) wave emission and detection at THz time-domain spectroscopy, where light sources locating at optical communication band can be used. For this purpose, the author reports here her group’s current research results on low-temperature growth of GaAs1-xBix using molecular beam epitaxy.</p>
Journal
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- Oyo Buturi
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Oyo Buturi 92 (10), 617-621, 2023-10-01
The Japan Society of Applied Physics
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Details 詳細情報について
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- CRID
- 1390860609162779904
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- ISSN
- 21882290
- 03698009
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- Text Lang
- ja
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- Data Source
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- JaLC
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- Abstract License Flag
- Disallowed