Ge (001)基板上へのInGaAsN薄膜のMOVPE成長（2）
Journal
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- JSAP Annual Meetings Extended Abstracts
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JSAP Annual Meetings Extended Abstracts 2010.2 (0), 3089-3089, 2010-08-30
The Japan Society of Applied Physics
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Details 詳細情報について
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- CRID
- 1390862036410965760
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- ISSN
- 24367613
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- Text Lang
- ja
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- Data Source
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- JaLC