書誌事項
- タイトル別名
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- Switching Loss Reduction in IGBTs by Multi-gate Control
抄録
<p>Insulated gate bipolar transistors (IGBTs) are now widely used in a variety of products ranging from home appliances to power conversion equipment. This paper introduces multi-gate control techniques for IGBTs with the aim of further reducing their total power loss. Results of experiments using prototype devices confirmed that multi-gate control achieves reductions in turn-off loss (Eoff), turn-on loss (Eon) and reverse recovery loss (Err) by 27%, 50% and 32%, respectively, compared with the conventional single-gate controlled devices.</p>
収録刊行物
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- 電気学会論文誌Ｃ（電子・情報・システム部門誌）
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電気学会論文誌Ｃ（電子・情報・システム部門誌） 144 (3), 212-216, 2024-03-01
一般社団法人 電気学会
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詳細情報 詳細情報について
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- CRID
- 1390862268820997760
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- ISSN
- 13488155
- 03854221
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- Crossref
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- 抄録ライセンスフラグ
- 使用不可