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- Saraya Takuya
- Institute of Indutrial Science, The University of Tokyo
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- Ito Kazuo
- Institute of Indutrial Science, The University of Tokyo
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- Takakura Toshihiko
- Institute of Indutrial Science, The University of Tokyo
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- Suzuki Shinichi
- Institute of Indutrial Science, The University of Tokyo
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- Fukui Munetoshi
- Institute of Indutrial Science, The University of Tokyo
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- Takeuchi Kiyoshi
- Institute of Indutrial Science, The University of Tokyo
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- Hiramoto Toshiro
- Institute of Indutrial Science, The University of Tokyo
Bibliographic Information
- Other Title
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- 両面ゲートIGBT(BC-IGBT)におけるスケーリングの影響
Abstract
<p>Back-gate-controlled IGBT (BC-IGBT) which uses a manufacturable double side lithography is experimentally demonstrated. The impact of IGBT scaling on BC-IGBT is evaluated in detail. A back gate control (BC-) mode in scaled IGBT shows better performance improvement compared with the BC-mode in non-scaled IGBT. Superior performance of BC-IGBT by optimizing both front side and back side design has been realized. Back gate control with scaled IGBT will provide a new technological option for expanding the frequency/voltage range of Si power devices, and become an attractive candidate for next generation high performance IGBTs.</p>
Journal
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- IEEJ Transactions on Electronics, Information and Systems
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IEEJ Transactions on Electronics, Information and Systems 144 (3), 245-250, 2024-03-01
The Institute of Electrical Engineers of Japan
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Details 詳細情報について
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- CRID
- 1390862268821034624
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- ISSN
- 13488155
- 03854221
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- Text Lang
- ja
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- Data Source
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- JaLC
- Crossref
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- Abstract License Flag
- Disallowed