Measuring the conduction band of Ta<sub>2</sub>NiSe<sub>5</sub> using low energy inverse photoelectron spectroscopy

DOI

Bibliographic Information

Other Title
  • 低エネルギー逆光電子分光によるTa<sub>2</sub>NiSe<sub>5</sub>の伝導帯の直接観測

Abstract

<p>Ta2NiSe5 is a candidate for the excitonic insulator. Recent photoemission study revealed that the valence band minimum shifts to the low energy side at low temperature, which is consistent with the excitonic insulator. To confirm this, it is necessary to observe the conduction band. In this study, we examined the conduction band of Ta2NiSe5 using the low energy inverse photoelectron spectroscopy (LEIPS). The lowest unoccupied band was observed at 0.55 eV above the Fermi level. This band did not shift at the low temperature of 80 K. This result supports the recent proposed picture that the Ta2NiSe5 is different from the conventional excitonic insulator; the noninteracting band structure is a band-overlap semimetal and the bandgap opens by the strong electron-hole attraction.</p>

Journal

Details 詳細情報について

  • CRID
    1391412881268818432
  • NII Article ID
    130007959320
  • DOI
    10.14886/jvss.2020.0_135
  • ISSN
    24348589
  • Text Lang
    ja
  • Data Source
    • JaLC
    • CiNii Articles
  • Abstract License Flag
    Disallowed

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