Defect analysis of β-Ga<sub>2</sub>O<sub>3</sub> single crystals using of angle-resolved cathodoluminescence
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- Okuno Kenya
- Nara Institute of Science and Technology
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- Ogami Tasuku
- Nara Institute of Science and Technology
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- Kato Yukako
- Advanced Industrial Science and Technology
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- Miki Kazushi
- University of Hyogo
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- Takeda Sakura
- Nara Institute of Science and Technology
Bibliographic Information
- Other Title
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- β-Ga<sub>2</sub>O<sub>3</sub>単結晶の角度分解カソードルミネッセンスによる欠陥解析
Abstract
<p>Ga2O3 has attracted much attention as a promising candidate material for high-voltage power devices. For the device fabrication, however, the control of defects is crucial. We developed the angle-resolved cathodoluminescence and investigated depth distribution of defects in Ga2O3 single crystals. As a result, we found the intensity of the red luminescence peak increases under the surface-sensitive conditions. .This shows the responsible defects for the red luminescence peak exists in the sub-surface region of Ga2O3.</p>
Journal
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- Abstract book of Annual Meeting of the Japan Society of Vacuum and Surface Science
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Abstract book of Annual Meeting of the Japan Society of Vacuum and Surface Science 2020 (0), 85-, 2020
The Japan Society of Vacuum and Surface Science
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Details 詳細情報について
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- CRID
- 1391412881268933120
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- NII Article ID
- 130007959505
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- ISSN
- 24348589
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- Text Lang
- ja
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- Data Source
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- JaLC
- CiNii Articles
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- Abstract License Flag
- Disallowed