Study on Analysis and Fabrication Conditions of Horizontal SiO<sub>2</sub> Slot Waveguides Using Nb<sub>2</sub>O<sub>5</sub>
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- HAYAMA Yoshiki
- Department of Electrical and Electronic Engineering, Kanagawa Institute of Technology
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- NAKATSUHARA Katsumi
- Department of Electrical and Electronic Engineering, Kanagawa Institute of Technology
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- UCHIBORI Shinta
- Department of Electrical and Electronic Engineering, Kanagawa Institute of Technology
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- NISHIZAWA Takeshi
- Department of Electrical and Electronic Engineering, Kanagawa Institute of Technology
抄録
<p>Horizontal slot waveguides enable light to be strongly confined in thin regions. The strong confinement of light in the slot region offers the advantages of enhancing the interaction of light with matter and providing highly sensitive sensing devices. We theoretically investigated fundamental characteristics of horizontal slot waveguides using Nb2O5. The coupling coefficient between SiO2 slot and air slot waveguides was calculated. Characteristics of bending loss in slot waveguide were also analyzed. The etching conditions in reactive ion etching needed to obtain a sidewall with high verticality were studied. We propose a process for fabricating horizontal slot waveguides using Nb2O5 thin film deposition and selective etching of SiO2. Horizontal slot waveguides were fabricated that had an SiO2 slot of less than 30 nm SiO2. The propagated light passing through the slot waveguides was also obtained.</p>
収録刊行物
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- IEICE Transactions on Electronics
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IEICE Transactions on Electronics E103.C (11), 669-678, 2020-11-01
一般社団法人 電子情報通信学会
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詳細情報 詳細情報について
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- CRID
- 1391693801397189504
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- NII論文ID
- 130007933934
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- ISSN
- 17451353
- 09168524
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- 本文言語コード
- en
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- データソース種別
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- JaLC
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- 抄録ライセンスフラグ
- 使用不可