Employ present five masks amorphous silicon thin-film transistor design and process flow to realize 5-in: InGaZnO active-matrix liquid crystal display with improved stress stability
Bibliographic Information
- Other Title
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- Employ present five masks amorphous silicon thin film transistor design and process flow to realize 5 in InGaZnO active matrix liquid crystal display with improved stress stability
- Special issue: Active-matrix flatpanel displays and devices: TFT technologies and FPD materials
- Special issue Active matrix flatpanel displays and devices TFT technologies and FPD materials
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Journal
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- Japanese journal of applied physics : JJAP
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Japanese journal of applied physics : JJAP 50 (3), 2011-03
Tokyo : The Japan Society of Applied Physics
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Details 詳細情報について
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- CRID
- 1520009407252306176
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- NII Article ID
- 40018777956
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- NII Book ID
- AA12295836
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- ISSN
- 00214922
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- NDL BIB ID
- 11054254
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- Text Lang
- en
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- NDL Source Classification
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- ZM35(科学技術--物理学)
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- Data Source
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- NDL
- CiNii Articles
