Importance of starting procedure for film growth in substrate-type microcrystalline-silicon solar cells

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  • Importance of starting procedure for film growth in substrate type microcrystalline silicon solar cells

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<jats:p>The starting procedure of hydrogenated microcrystalline-silicon (µc-Si:H) film growth at a high rate has been controlled in a plasma-enhanced chemical vapor deposition process to improve the optoelectronic properties of the resulting n/i interface as well as the intrinsic bulk layer in µc-Si:H-based substrate-type (n–i–p) solar cells. The electron temperature, monitored using optical emission spectroscopy, in the plasma during film growth is successfully controlled by changing the starting procedure, i.e., gradual SiH<jats:sub>4</jats:sub>introduction and slow power application, leading to the preparation of high-quality µc-Si:H films with a low dangling-bond defect density. Reduction of the defect density in the intrinsic layer and improvement of the optoelectronic properties at the n/i interface are demonstrated through the fabrication of single-junction n–i–p solar cells showing high photovoltaic performance.</jats:p>

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