Effects of residual carbon and hydrogen atoms on electrical property of GaAsN films grown by chemical beam epitaxy
Bibliographic Information
- Other Title
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- Special issue: Dry process
- Special issue Dry process
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Abstract
コレクション : 国立国会図書館デジタルコレクション > デジタル化資料 > 雑誌
Journal
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- Japanese journal of applied physics : JJAP
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Japanese journal of applied physics : JJAP 47 (8), 6910-6913, 2008-08
Tokyo : The Japan Society of Applied Physics
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Keywords
Details 詳細情報について
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- CRID
- 1520009407624459648
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- NII Article ID
- 40016211131
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- NII Book ID
- AA12295836
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- ISSN
- 00214922
- 13474065
- http://id.crossref.org/issn/13474065
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- NDL BIB ID
- 9622161
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- Text Lang
- en
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- NDL Source Classification
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- ZM35(科学技術--物理学)
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- Data Source
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- NDL
- Crossref
- CiNii Articles