Improvements in optoelectrical properties of GaAsN by controlling step density during chemical beam epitaxy growth

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  • Special issue: Solid state devices and materials
  • Special issue Solid state devices and materials

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Abstract

<jats:p> Improvements in optoelectrical properties of GaAsN are demonstrated by chemical beam epitaxy (CBE) growth on high-step-density GaAs substrates. The step density at the growing surface is controlled using 2, 4, and 10° off GaAs(001) wafers as substrates. The number of carrier scattering centers induced by N (<jats:italic>SC</jats:italic> <jats:sub>N</jats:sub>) in the grown GaAsN films is quantitatively evaluated from the temperature dependence of hole mobility and used as an indicator of film quality. In previous studies, <jats:italic>SC</jats:italic> <jats:sub>N</jats:sub> increased with increasing N composition independently of the growth technique used. By CBE with high-step-density substrates, the reduction in <jats:italic>SC</jats:italic> <jats:sub>N</jats:sub> is achieved. This method also improves the emission intensity of cathode luminescence. </jats:p>

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