Effect of introducing β-FeSi2 template layers on defect density and minority carrier diffusion length in Si region near p-β-FeSi2/n-Si heterointerface

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  • Effect of introducing v FeSi2 template layers on defect density and minority carrier diffusion length in Si region near p v FeSi2 n Si heterointerface

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<jats:p> The electrical properties of defects in a p-β-FeSi<jats:sub>2</jats:sub>/n-Si heterostructures were investigated by deep level transient spectroscopy (DLTS) and the electron-beam-induced current (EBIC) technique. DLTS revealed the presence of trap levels for holes, caused by defects in the n-Si layer near the interface during the β-FeSi<jats:sub>2</jats:sub> film fabrication. The defect density became small when a 20-nm-thick β-FeSi<jats:sub>2</jats:sub> template layer was grown on the n-Si prior to molecular beam epitaxy (MBE) of a 700-nm-thick β-FeSi<jats:sub>2</jats:sub> layer. The diffusion length of minority carriers in the n-Si was found to be approximately 15 µm by EBIC. This is much larger than the value of approximately 3 µm for the n-Si obtained when the template layer was not inserted. </jats:p>

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