Effect of annealing-induced interdiffusion on the electronic structure of mid infrared emitting GaInAsSb/AlGaInAsSb quantum wells
Bibliographic Information
- Other Title
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- Effect of annealing induced interdiffusion on the electronic structure of mid infrared emitting GaInAsSb AlGaInAsSb quantum wells
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Journal
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- Japanese journal of applied physics : JJAP
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Japanese journal of applied physics : JJAP 50 (3), 031202-, 2011-03
Tokyo : The Japan Society of Applied Physics
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Details 詳細情報について
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- CRID
- 1520009407959326464
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- NII Article ID
- 40018777869
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- NII Book ID
- AA12295836
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- ISSN
- 00214922
- 13474065
- http://id.crossref.org/issn/13474065
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- NDL BIB ID
- 11054234
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- Text Lang
- en
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- NDL Source Classification
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- ZM35(科学技術--物理学)
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- Data Source
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- NDL
- Crossref
- CiNii Articles
