Process conditions for improvement of electrical properties of Al2O3/n-GaN structures prepared by atomic layer deposition
Bibliographic Information
- Other Title
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- Process conditions for improvement of electrical properties of Al2O3 n GaN structures prepared by atomic layer deposition
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Abstract
コレクション : 国立国会図書館デジタルコレクション > デジタル化資料 > 雑誌
Journal
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- Japanese journal of applied physics : JJAP
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Japanese journal of applied physics : JJAP 49 (8), 080201-, 2010-08
Tokyo : The Japan Society of Applied Physics
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Details 詳細情報について
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- CRID
- 1520009408513533440
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- NII Article ID
- 40017253745
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- NII Book ID
- AA12295836
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- ISSN
- 00214922
- 13474065
- http://id.crossref.org/issn/13474065
- http://id.crossref.org/issn/00214922
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- NDL BIB ID
- 10793297
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- Text Lang
- en
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- NDL Source Classification
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- ZM35(科学技術--物理学)
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- Data Source
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- NDL
- Crossref
- CiNii Articles
- KAKEN
