Investigation of threshold voltage disturbance caused by programmed adjacent cell in virtual source/drain NAND flash memory
書誌事項
- タイトル別名
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- Investigation of threshold voltage disturbance caused by programmed adjacent cell in virtual source drain NAND flash memory
- Special issue: Solid state devices and materials
- Special issue Solid state devices and materials
この論文をさがす
収録刊行物
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- Japanese journal of applied physics : JJAP
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Japanese journal of applied physics : JJAP 50 (4), 2011-04
Tokyo : The Japan Society of Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1520009408634506496
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- NII論文ID
- 40018800955
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- NII書誌ID
- AA12295836
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- ISSN
- 00214922
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- NDL書誌ID
- 11075897
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- 本文言語コード
- en
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- NDL 雑誌分類
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- ZM35(科学技術--物理学)
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- データソース種別
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- NDL
- CiNii Articles