Interface states and trapping effects in Al2O3- and ZrO2/InAlN/AlN/GaN metal-oxide-semiconductor heterostructures
Bibliographic Information
- Other Title
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- Interface states and trapping effects in Al2O3 and ZrO2 InAlN AlN GaN metal oxide semiconductor heterostructures
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Abstract
コレクション : 国立国会図書館デジタルコレクション > デジタル化資料 > 雑誌
Journal
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- Japanese journal of applied physics : JJAP
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Japanese journal of applied physics : JJAP 48 (9), 2009-09
Tokyo : The Japan Society of Applied Physics
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Details 詳細情報について
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- CRID
- 1520009408719210368
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- NII Article ID
- 40016742977
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- NII Book ID
- AA12295836
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- ISSN
- 00214922
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- NDL BIB ID
- 10365344
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- Text Lang
- en
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- NDL Source Classification
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- ZM35(科学技術--物理学)
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- Data Source
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- NDL
- CiNii Articles