Dual-material gate approach to suppression of random-dopant-induced characteristic fluctuation in 16nm metal-oxide-semiconductor field-effect-transistor devices
書誌事項
- タイトル別名
-
- Dual material gate approach to suppression of random dopant induced characteristic fluctuation in 16nm metal oxide semiconductor field effect transistor devices
- Special issue: Solid state devices and materials
- Special issue Solid state devices and materials
この論文をさがす
収録刊行物
-
- Japanese journal of applied physics : JJAP
-
Japanese journal of applied physics : JJAP 50 (4), 2011-04
Tokyo : The Japan Society of Applied Physics
- Tweet
詳細情報 詳細情報について
-
- CRID
- 1520009408912220800
-
- NII論文ID
- 40018800932
-
- NII書誌ID
- AA12295836
-
- ISSN
- 00214922
-
- NDL書誌ID
- 11075570
-
- 本文言語コード
- en
-
- NDL 雑誌分類
-
- ZM35(科学技術--物理学)
-
- データソース種別
-
- NDL
- CiNii Articles