Abrupt lateral-source heterostructures with relaxed/strained layers for ballistic complementary metal oxide semiconductor transistors fabricated by local O[+] ion-induced relaxation technique of strained substrates

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Abrupt lateral source heterostructures with relaxed strained layers for ballistic complementary metal oxide semiconductor transistors fabricated by local O ion induced relaxation technique of strained substrates
Special issue: Solid state devices and materials
Special issue Solid state devices and materials

Japanese journal of applied physics : JJAP

Japanese journal of applied physics : JJAP 50 (4), 2011-04

Tokyo : The Japan Society of Applied Physics