Effect of Pd reactant on one-dimensional growth of ZnO on Si substrate by thermal evaporation method

Kyoun-bum Kim, Young Hun Jeong, Chang-il Kim

doi:10.1143/jjap.50.055003

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Effect of Pd reactant on one dimensional growth of ZnO on Si substrate by thermal evaporation method

公開日: 2011-05

DOI

10.1143/jjap.50.055003

公開者: Tokyo : The Japan Society of Applied Physics

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<jats:p> ZnO nanostructures were developed on a Si(100) substrate from the powder mixture of ZnO and <jats:italic>x</jats:italic> mol % Pd (ZP-<jats:italic>x</jats:italic>) as reactants using a thermal evaporation method. The effect of Pd on the growth characteristics of one-dimensional ZnO nanostructures was investigated. High temperature X-ray diffraction patterns obviously revealed that Pd assisted the reduction of ZnO at temperatures higher than 1000 °C. Needle-like ZnO nanorod array, developed from ZP-<jats:italic>x</jats:italic> (<jats:italic>x</jats:italic>≥2) mixture, was well aligned vertically on the Si substrate at 1100 °C while nano-crystalline ZnO layer was only obtained from pure ZnO powder. Thus, it is considered that Pd is responsible for the growth of ZnO nanorod on the Si substrate at 1100 °C by providing the Zn vapor for the Zn/ZnO<jats:sub> <jats:italic>x</jats:italic> </jats:sub> droplets with reducing ZnO in the reactant. The developed ZnO nanorod exhibited growth direction along [001] with defect-free high crystallinity. </jats:p>

収録刊行物

Japanese journal of applied physics : JJAP

Japanese journal of applied physics : JJAP 50 (5), 055003-, 2011-05

Tokyo : The Japan Society of Applied Physics

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