Double patterning using multilayer hard mask process with perhydropolysilazane

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<jats:p> A new technology called the double patterning (DP) process with ArF immersion lithography is one of the candidate fabrication technologies for 32-nm-node devices. Over the past few years, many studies have been conducted on techniques of the DP process. Among these technologies, the double Si hard mask (HM) process is thought to be the most applicable technology from the viewpoint of high technical applicability to 32-nm-node device fabrication. However, this process has a disadvantage in terms of cost performance compared with other DP technologies since these HMs are formed by the chemical vacuum deposition (CVD) method. In this study, we examined the DP process using a dual spin-on Si-containing layer without using the CVD method to improve process cost and process applicability. Perhydropolysilazane (PSZ) was used as one of the middle layers (MLs). PSZ changes to SiO<jats:sub>2</jats:sub> through reaction with water by the catalytic action of amine in the baking step. Using PSZ and Si-BARC as MLs, we succeeded in fabricating a fine pattern by this novel DP technique. In this paper, the issues and countermeasures of the double HM technique using spin-on Si-containing layers will be reported. </jats:p>

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