Roughness increase on surface and interface of SiO2 grown on atomically flat Si(111) terrace

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  • Roughness increase on surface and interface of SiO2 grown on atomically flat Si 111 terrace
  • Special issue: Dielectric thin films for future ULSI devices: science and technology
  • Special issue Dielectric thin films for future ULSI devices science and technology

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コレクション : 国立国会図書館デジタルコレクション > デジタル化資料 > 雑誌

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