Hole-mobility and drive-current enhancement in Ge-rich strained silicon-germanium wire tri-gate metal-oxide-semiconductor field-effect transistors with nickel-germanosilicide metal source and drain
書誌事項
- タイトル別名
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- Hole mobility and drive current enhancement in Ge rich strained silicon germanium wire tri gate metal oxide semiconductor field effect transistors with nickel germanosilicide metal source and drain
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収録刊行物
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- Applied physics express : APEX
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Applied physics express : APEX 3 (12), 2010-12
Tokyo : Japan Society of Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1520010380718035712
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- NII論文ID
- 10027618601
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- NII書誌ID
- AA12295133
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- ISSN
- 18820778
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- NDL書誌ID
- 10926689
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- 本文言語コード
- en
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- NDL 雑誌分類
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- ZM35(科学技術--物理学)
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- データソース種別
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- NDL
- CiNii Articles