Study of the DC performance of fabricated Magnetic Tunnel Junction integrated on back-end metal line of CMOS circuits
Bibliographic Information
- Other Title
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- Study of the DC performance of fabricated Magnetic Tunnel Junction integrated on back end metal line of CMOS circuits
- Electron devices
- Electron devices
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Journal
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- 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報
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電子情報通信学会技術研究報告 = IEICE technical report : 信学技報 109 (97), 13-16, 2009-06
東京 : 電子情報通信学会
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Keywords
Details 詳細情報について
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- CRID
- 1520290882107219200
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- NII Article ID
- 110007360212
- 110007338282
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- NII Book ID
- AA1123312X
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- ISSN
- 09135685
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- Text Lang
- en
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- NDL Source Classification
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- ZN33(科学技術--電気工学・電気機械工業--電子工学・電気通信)
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- Data Source
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- NDL
- CiNii Articles