A Cu-metallized InGaP/GaAs heterojunction bipolar transistor with reliable Pd/Ge/Cu ohmic contact for power applications
Bibliographic Information
- Other Title
-
- A Cu metallized InGaP GaAs heterojunction bipolar transistor with reliable Pd Ge Cu ohmic contact for power applications
Search this article
Abstract
コレクション : 国立国会図書館デジタルコレクション > デジタル化資料 > 雑誌
Journal
-
- Japanese journal of applied physics : JJAP
-
Japanese journal of applied physics : JJAP 49 (2), 020215-, 2010-02
Tokyo : The Japan Society of Applied Physics
- Tweet
Details 詳細情報について
-
- CRID
- 1520290882124750336
-
- NII Article ID
- 40016982481
-
- NII Book ID
- AA12295836
-
- ISSN
- 00214922
- 13474065
-
- NDL BIB ID
- 10572164
-
- Text Lang
- en
-
- NDL Source Classification
-
- ZM35(科学技術--物理学)
-
- Data Source
-
- NDL
- Crossref
- CiNii Articles