Control of Threshold Voltage of Enhancement-Mode AlxGa1-xN/GaN Junction Heterostructure Field-Effect Transistors Using p-GaN Gate Contact

DOI Web Site Web Site Web Site 被引用文献11件参考文献16件

書誌事項

タイトル別名

Control of Threshold Voltage of Enhancement Mode AlxGa1 xN GaN Junction Heterostructure Field Effect Transistors Using p GaN Gate Contact

コレクション : 国立国会図書館デジタルコレクション > デジタル化資料 > 雑誌

Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP

Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP 46 (1), 115-118, 2007-01

Tokyo : Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics