Deep-hole traps in p-type GaAs1-xBi[x] grown by molecular beam epitaxy

Details 詳細情報について

• CRID

  1520290882246558848

• NII Article ID

  40018960965

• NII Book ID

  AA12295836

• ISSN

  00214922

• NDL BIB ID

  11210869

• Web Site

  http://id.ndl.go.jp/bib/11210869

  https://ndlsearch.ndl.go.jp/books/R000000004-I11210869

• Text Lang

  en

• NDL Source Classification

  • ZM35(科学技術--物理学)

• Data Source

  • NDL
  • CiNii Articles