First-Principles Calculation of Tunneling Current of H2- or NH3-Adsorbed Si(001) Surface in Scanning Tunneling Microscopy
Bibliographic Information
- Other Title
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- First Principles Calculation of Tunneling Current of H2 or NH3 Adsorbed Si 001 Surface in Scanning Tunneling Microscopy
- Special Issue: Scanning Tunneling Microscopy/Spectroscopy and Related Techniques
- Special Issue Scanning Tunneling Microscopy Spectroscopy and Related Techniques
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Description
コレクション : 国立国会図書館デジタルコレクション > デジタル化資料 > 雑誌
Journal
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- Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP
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Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP 45 (3B), 2154-2157, 2006-03
Tokyo : Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics
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Keywords
Details 詳細情報について
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- CRID
- 1520290882305509760
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- NII Article ID
- 40007204816
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- NII Book ID
- AA10457675
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- ISSN
- 00214922
- 13474065
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- NDL BIB ID
- 7868306
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- Text Lang
- en
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- NDL Source Classification
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- ZM35(科学技術--物理学)
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- Data Source
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- NDL Search
- Crossref
- CiNii Articles
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