Isotope tracing study of GeO desorption mechanism from GeO2/Ge stack using 73Ge and 18O

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  • Isotope tracing study of GeO desorption mechanism from GeO2 Ge stack using 73Ge and 18O
  • Special issue: Solid state devices and materials
  • Special issue Solid state devices and materials

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<jats:p> GeO desorption from a GeO<jats:sub>2</jats:sub>/Ge stack is a critical concern in Ge metal oxide semiconductor field effect transistors (MOSFETs). In this contribution, we focus on a uniform-desorption region and unveil the GeO desorption mechanism from a GeO<jats:sub>2</jats:sub>/Ge stack by <jats:sup>73</jats:sup>Ge and <jats:sup>18</jats:sup>O isotope tracing in thermal desorption spectroscopy (TDS) analysis, in which the Ge and O diffusion kinetics in GeO<jats:sub>2</jats:sub> and the interfacial reaction kinetics have been investigated. Through <jats:sup>73</jats:sup>Ge isotope tracing, we have clarified that Ge in the desorbed GeO dominantly comes from the GeO<jats:sub>2</jats:sub> surface. Moreover, the self-diffusivity of oxygen was evaluated to be much larger than Ge in GeO<jats:sub>2</jats:sub>. Furthermore, owing to the difference among GeO desorptions from GeO<jats:sub>2</jats:sub>/Ge stacks with various substrate orientations, the reaction at the GeO<jats:sub>2</jats:sub>/Ge interface was attributed to the redox reaction kinetics. On the basis of our experimental findings, we have proposed an oxygen vacancy diffusion model of the GeO desorption mechanism. </jats:p>

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