Accurate Method of Measuring Specific Contact Resistivity of Interface between Silicide and Silicon and Its Application
この論文をさがす
抄録
<jats:p> Reduction of specific contact resistivity is one of the key items for downscaling of device feature size. This paper discusses an accurate method of measuring specific contact resistivity by using our simple four-point probe test structure having a small area, the interface resistance of which is to be measured, fabricated on a substrate that has low sheet resistance. We also show its application for direct specific contact resistivity measurements of several systems that have dopant dependence, i.e., the NiPtSi/Si, NiPtSi/SiGe, and Pt silicide systems, as well as the metal-metal system between silicide and contact plug metal. </jats:p>
収録刊行物
-
- Japanese journal of applied physics : JJAP
-
Japanese journal of applied physics : JJAP 51 (10), 101302-, 2012-10
Tokyo : The Japan Society of Applied Physics
- Tweet
詳細情報 詳細情報について
-
- CRID
- 1520290882584904960
-
- NII論文ID
- 40019455573
-
- NII書誌ID
- AA12295836
-
- ISSN
- 00214922
- 13474065
-
- NDL書誌ID
- 024025958
-
- 本文言語コード
- en
-
- NDL 雑誌分類
-
- ZM35(科学技術--物理学)
-
- データソース種別
-
- NDL
- Crossref
- CiNii Articles