Successful Growth of Conductive Highly Crystalline Sn-Doped α-Ga₂O₃ Thin Films by Fine-Channel Mist Chemical Vapor Deposition

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<jats:p> Highly crystalline α-phase gallium oxide (Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>) thin films were grown by fine-channel mist chemical vapor deposition on <jats:italic>c</jats:italic>-sapphire substrates at 400 °C at a deposition rate of more than 20 nm/min. The thin films were doped with Sn(IV) atoms, which were obtained from Sn(II) chloride by the reaction SnCl<jats:sub>2</jats:sub>+ H<jats:sub>2</jats:sub>O<jats:sub>2</jats:sub>+ 2HCl→SnCl<jats:sub>4</jats:sub>+ 2H<jats:sub>2</jats:sub>O. Conductive α-phase Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> thin films were successfully grown from source solutions containing less than 10 at. % Sn(IV). The source solution containing 4 at. % Sn(IV) resulted in obtaining a thin film with an n-type conductivity as high as 0.28 S cm<jats:sup>-1</jats:sup>, a mobility of 0.23 cm<jats:sup>2</jats:sup> V<jats:sup>-1</jats:sup> s<jats:sup>-1</jats:sup>, a carrier concentration of 7×10<jats:sup>18</jats:sup> cm<jats:sup>-3</jats:sup>, and a full width at half maximum (FWHM) of the (0006) reflection X-ray rocking curve as low as 64 arcsec. </jats:p>

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