Investigation of the Low-Frequency Noise Behavior and Its Correlation with the Subgap Density of States and Bias-Induced Instabilities in Amorphous InGaZnO Thin-Film Transistors with Various Oxygen Flow Rates
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収録刊行物
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- Japanese journal of applied physics : JJAP
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Japanese journal of applied physics : JJAP 51 (10), 2012-10
Tokyo : The Japan Society of Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1520290882946819840
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- NII論文ID
- 40019455486
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- NII書誌ID
- AA12295836
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- ISSN
- 00214922
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- NDL書誌ID
- 024025832
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- 本文言語コード
- en
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- NDL 雑誌分類
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- ZM35(科学技術--物理学)
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- データソース種別
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- NDL
- CiNii Articles