Effect of Inductively Coupled Plasma Etching in p-Type GaN Schottky Contacts
Bibliographic Information
- Other Title
-
- Special Issue : Recent Advances in Nitride Semiconductors
Search this article
Journal
-
- Japanese journal of applied physics : JJAP
-
Japanese journal of applied physics : JJAP 52 (8), 2013-08
Tokyo : The Japan Society of Applied Physics
- Tweet
Details 詳細情報について
-
- CRID
- 1520290882964293760
-
- NII Article ID
- 120005296500
-
- NII Book ID
- AA12295836
-
- ISSN
- 00214922
-
- NDL BIB ID
- 024787076
-
- Text Lang
- en
-
- NDL Source Classification
-
- ZM35(科学技術--物理学)
-
- Data Source
-
- NDL
- CiNii Articles
- KAKEN