Suppression of gate leakage and enhancement of breakdown voltage using thermally oxidized Al layer as gate dielectric for AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors

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  • Suppression of gate leakage and enhancement of breakdown voltage using thermally oxidized Al layer as gate dielectric for AlGaN GaN metal oxide semiconductor high electron mobility transistors
  • Special issue: Solid state devices and materials
  • Special issue Solid state devices and materials

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