Reliability and Memory Characteristics of Sequential Laterally Solidified Low Temperature Polycrystalline Silicon Thin Film Transistors with an Oxide-Nitride-Oxide Stack Gate Dielectric
書誌事項
- タイトル別名
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- Reliability and Memory Characteristics of Sequential Laterally Solidified Low Temperature Polycrystalline Silicon Thin Film Transistors with an Oxide Nitride Oxide Stack Gate Dielectric
- Special Issue: Solid State Devices & Materials
- Special Issue Solid State Devices Materials
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コレクション : 国立国会図書館デジタルコレクション > デジタル化資料 > 雑誌
収録刊行物
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- Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP
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Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP 45 (4B), 3154-3158, 2006-04
Tokyo : Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1520290883029230720
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- NII論文ID
- 40007238459
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- NII書誌ID
- AA10457675
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- ISSN
- 00214922
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- NDL書誌ID
- 7894876
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- 本文言語コード
- en
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- NDL 雑誌分類
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- ZM35(科学技術--物理学)
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- データソース種別
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- NDL
- CiNii Articles