4H-SiC(0001) basal plane stability during the growth of epitaxial graphene on inverted-mesa structures
書誌事項
- タイトル別名
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- 4H SiC 0001 basal plane stability during the growth of epitaxial graphene on inverted mesa structures
- Selected topics in applied physics: Technology, physics, and modeling of graphene devices
- Selected topics in applied physics Technology physics and modeling of graphene devices
この論文をさがす
収録刊行物
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- Japanese journal of applied physics : JJAP
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Japanese journal of applied physics : JJAP 50 (7), 2011-07
Tokyo : The Japan Society of Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1520290883038888320
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- NII論文ID
- 40018915922
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- NII書誌ID
- AA12295836
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- ISSN
- 00214922
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- NDL書誌ID
- 11171719
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- 本文言語コード
- en
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- NDL 雑誌分類
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- ZM35(科学技術--物理学)
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- データソース種別
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- NDL
- CiNii Articles
