Trade-Off between Hot Carrier Effect and Current Driving Capability Due to Drain Contact Structures in Deep Submicron MOSFETs
Bibliographic Information
- Other Title
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- Trade-Off between Hot Carrier Effect an
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Description
コレクション : 国立国会図書館デジタルコレクション > デジタル化資料 > 雑誌
Journal
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- Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP
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Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP 37 (3B), 1041-1046, 1998-03
Tokyo : Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics
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Details 詳細情報について
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- CRID
- 1520290883128715008
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- NII Article ID
- 110003906359
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- NII Book ID
- AA10457675
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- ISSN
- 00214922
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- NDL BIB ID
- 4473544
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- Text Lang
- en
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- NDL Source Classification
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- ZM35(科学技術--物理学)
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- Data Source
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- NDL
- CiNii Articles
