A nonpolar a-plane GaN grown on a hemispherical patterned r-plane sapphire substrate

DOI Web Site Web Site Web Site 被引用文献3件 参考文献18件

書誌事項

タイトル別名
  • A nonpolar a plane GaN grown on a hemispherical patterned r plane sapphire substrate

この論文をさがす

抄録

<jats:p> A high-quality <jats:italic>a</jats:italic>-plane GaN layer with a pit-free, mirror-like surface was grown on a hemispherical patterned <jats:italic>r</jats:italic>-plane sapphire substrate (PSS) by metal–organic chemical vapor deposition. The use of the <jats:italic>r</jats:italic>-plane PSS reduced the density of defects such as basal plane staking faults and threading dislocations of the <jats:italic>a</jats:italic>-plane GaN. The low-temperature-photoluminescence intensity of the emissions at 3.25 and 3.39 eV related with the defects increased along with the near-band-edge emission at 3.46 eV. The intensity of yellow emission at 2.2 eV on the PSS was remarkably decreased, which indicates the improvement of the crystal quality because of the defect reduction. The InGaN light emitting diode grown on the PSS showed an output power of 7.4 mW at 100 mA, which was about 7 times higher than that on the planar substrate. </jats:p>

収録刊行物

被引用文献 (3)*注記

もっと見る

参考文献 (18)*注記

もっと見る

キーワード

詳細情報 詳細情報について

問題の指摘

ページトップへ