Effective Work Function Engineering for Aggressively Scaled Planar and Multi-Gate Fin Field-Effect Transistor-Based Devices with High-k Last Replacement Metal Gate Technology
Bibliographic Information
- Other Title
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- Special Issue : Solid State Devices and Materials
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Journal
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- Japanese journal of applied physics : JJAP
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Japanese journal of applied physics : JJAP 52 (4), 2013-04
Tokyo : The Japan Society of Applied Physics
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Details 詳細情報について
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- CRID
- 1520290883397074944
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- NII Article ID
- 40019637534
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- NII Book ID
- AA12295836
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- ISSN
- 00214922
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- NDL BIB ID
- 024437042
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- Text Lang
- en
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- NDL Source Classification
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- ZM35(科学技術--物理学)
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- Data Source
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- NDL
- CiNii Articles
