Source of Surface Morphological Defects Formed on 4H-SiC Homoepitaxial Films
Bibliographic Information
- Other Title
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- Source of Surface Morphological Defects Formed on 4H SiC Homoepitaxial Films
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Description
コレクション : 国立国会図書館デジタルコレクション > デジタル化資料 > 雑誌
Journal
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- Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP
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Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP 45 (10A), 7625-7631, 2006-10
Tokyo : Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics
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Keywords
Details 詳細情報について
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- CRID
- 1520290883497822464
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- NII Article ID
- 40007462473
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- NII Book ID
- AA10457675
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- ISSN
- 00214922
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- NDL BIB ID
- 8086723
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- Text Lang
- en
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- NDL Source Classification
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- ZM35(科学技術--物理学)
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- Data Source
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- NDL
- CiNii Articles
