Improvement in the property of field effect transistor having the HfO2/Ge structure fabricated by photoassisted metal organic chemical vapor deposition with fluorine treatment

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  • Improvement in the property of field effect transistor having the HfO2 Ge structure fabricated by photoassisted metal organic chemical vapor deposition with fluorine treatment
  • Special issue: Solid state devices and materials
  • Special issue Solid state devices and materials

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