Characterization of plasma-irradiated SiO2/Si interface properties by photoinduced-carrier microwave absorption method
書誌事項
- タイトル別名
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- Characterization of plasma irradiated SiO2 Si interface properties by photoinduced carrier microwave absorption method
- Special issue: Active-matrix flatpanel displays and devices: TFT technologies and FPD materials
- Special issue Active matrix flatpanel displays and devices TFT technologies and FPD materials
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収録刊行物
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- Japanese journal of applied physics : JJAP
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Japanese journal of applied physics : JJAP 50 (3), 2011-03
Tokyo : The Japan Society of Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1520290883646157312
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- NII論文ID
- 40018777947
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- NII書誌ID
- AA12295836
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- ISSN
- 00214922
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- NDL書誌ID
- 11054217
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- 本文言語コード
- en
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- NDL 雑誌分類
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- ZM35(科学技術--物理学)
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- データソース種別
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- NDL
- CiNii Articles