Electrical characterization of wafer-bonded germanium-on-insulator substrates using a four-point-probe pseudo-metal-oxide-semiconductor field-effect transistor
書誌事項
- タイトル別名
-
- Electrical characterization of wafer bonded germanium on insulator substrates using a four point probe pseudo metal oxide semiconductor field effect transistor
- Special issue: Solid state devices and materials
- Special issue Solid state devices and materials
この論文をさがす
収録刊行物
-
- Japanese journal of applied physics : JJAP
-
Japanese journal of applied physics : JJAP 50 (4), 2011-04
Tokyo : The Japan Society of Applied Physics
- Tweet
詳細情報 詳細情報について
-
- CRID
- 1520290883749241216
-
- NII論文ID
- 40018800918
-
- NII書誌ID
- AA12295836
-
- ISSN
- 00214922
-
- NDL書誌ID
- 11075325
-
- 本文言語コード
- en
-
- NDL 雑誌分類
-
- ZM35(科学技術--物理学)
-
- データソース種別
-
- NDL
- CiNii Articles