Preparation of an ultraclean and atomically controlled hydrogen-terminated Si(111)-(1×1) surface revealed by high resolution electron energy loss spectroscopy, atomic force microscopy, and scanning tunneling microscopy: aqueous NH4F etching process of Si(111)

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Preparation of an ultraclean and atomically controlled hydrogen terminated Si 111 1 1 surface revealed by high resolution electron energy loss spectroscopy atomic force microscopy and scanning tunneling microscopy aqueous NH4F etching process of Si 111

コレクション : 国立国会図書館デジタルコレクション > デジタル化資料 > 雑誌

Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP

Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP 46 (9A), 5701-5705, 2007-09

Tokyo : Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics