Void-free room-temperature silicon wafer direct bonding using sequential plasma activation
Bibliographic Information
- Other Title
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- Void free room temperature silicon wafer direct bonding using sequential plasma activation
- Special issue: Solid state devices and materials
- Special issue Solid state devices and materials
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Abstract
コレクション : 国立国会図書館デジタルコレクション > デジタル化資料 > 雑誌
Journal
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- Japanese journal of applied physics : JJAP
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Japanese journal of applied physics : JJAP 47 (4), 2526-2530, 2008-04
Tokyo : The Japan Society of Applied Physics
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Keywords
Details 詳細情報について
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- CRID
- 1520290884210738944
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- NII Article ID
- 40016003468
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- NII Book ID
- AA12295836
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- ISSN
- 00214922
- 13474065
- http://id.crossref.org/issn/13474065
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- NDL BIB ID
- 9477465
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- Text Lang
- en
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- NDL Source Classification
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- ZM35(科学技術--物理学)
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- Data Source
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- NDL
- Crossref
- CiNii Articles
