Research on reaction method of high removal rate chemical mechanical polishing slurry for 4H-SiC substrate
書誌事項
- タイトル別名
-
- Research on reaction method of high removal rate chemical mechanical polishing slurry for 4H SiC substrate
この論文をさがす
抄録
<jats:p> In this study, the high removal rate silicon carbide (SiC) chemical mechanical polishing (CMP) slurry was researched to reduce polishing process time. At first, oxidizing reaction was researched to understand the effectiveness of oxidizer in SiC polishing mechanism and then oxidizer was optimized to increase reactivity for high SiC removal at the point of kinds and amount. Next research was to find out additives to reduce polishing time by making brittle layer at SiC surface. This brittle layer can faster be removed at polishing process than without additives. As a result, through this research, we could achieve high 4H-SiC removal CMP Slurry using optimization of oxidizer and additives. </jats:p>
収録刊行物
-
- Japanese journal of applied physics : JJAP
-
Japanese journal of applied physics : JJAP 50 (4), 046501-, 2011-04
Tokyo : The Japan Society of Applied Physics
- Tweet
詳細情報 詳細情報について
-
- CRID
- 1520290884235561216
-
- NII論文ID
- 40018800896
-
- NII書誌ID
- AA12295836
-
- ISSN
- 00214922
- 13474065
-
- NDL書誌ID
- 11075953
-
- 本文言語コード
- en
-
- NDL 雑誌分類
-
- ZM35(科学技術--物理学)
-
- データソース種別
-
- NDL
- Crossref
- CiNii Articles