Fabrication of transparent p-type Cu[x]Zn[y]S thin films by the electrochemical deposition method

DOI Web Site Web Site Web Site 被引用文献1件 参考文献13件

書誌事項

タイトル別名
  • Fabrication of transparent p type Cu x Zn y S thin films by the electrochemical deposition method

この論文をさがす

抄録

<jats:p> Cu<jats:sub> <jats:italic>x</jats:italic> </jats:sub>Zn<jats:sub> <jats:italic>y</jats:italic> </jats:sub>S thin films were deposited on indium–tin oxide-coated glass substrates by the electrochemical deposition (ECD) method using aqueous solutions containing CuSO<jats:sub>4</jats:sub>, ZnSO<jats:sub>4</jats:sub>, and Na<jats:sub>2</jats:sub>S<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>. The film deposited under optimum conditions exhibited a high optical transmission, and its energy band gap was about 3.2 eV. It was confirmed that Cu<jats:sub> <jats:italic>x</jats:italic> </jats:sub>Zn<jats:sub> <jats:italic>y</jats:italic> </jats:sub>S showed p-type conduction and photosensitivity. To fabricate a ZnO/Cu<jats:sub> <jats:italic>x</jats:italic> </jats:sub>Zn<jats:sub> <jats:italic>y</jats:italic> </jats:sub>S heterojunction, an n-type ZnO thin film was deposited on Cu<jats:sub> <jats:italic>x</jats:italic> </jats:sub>Zn<jats:sub> <jats:italic>y</jats:italic> </jats:sub>S by ECD. In a current–voltage measurement, the heterojunction showed rectification properties. </jats:p>

収録刊行物

被引用文献 (1)*注記

もっと見る

参考文献 (13)*注記

もっと見る

キーワード

詳細情報 詳細情報について

問題の指摘

ページトップへ