Grain Growth in Cu₂ZnSnS₄ Thin Films Using Sn Vapor Transport for Photovoltaic Applications

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Cu2ZnSnS4 thin films containing grains grown using Sn vapor transport (TVT) were investigated. Structural characterization revealed that the grain sizes were equal to or larger than the film thickness (1–4 µm) and significantly larger than those in the case of growth without TVT (60 nm). Furthermore, no phase separation was detected. Photothermal diffraction spectroscopy revealed that the optical absorption coefficient was very low in the subgap region, 7×101 cm-1, suggesting the suppression of defect formation. Finally, a TVT-processed thin film was used as an absorber in a solar cell, and a conversion efficiency of 6.9% was achieved.

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