Drastic reduction of dislocation density in semipolar (1122) GaN stripe crystal on Si substrate by dual selective metal-organic vapor phase epitaxy
書誌事項
- タイトル別名
-
- Drastic reduction of dislocation density in semipolar 1122 GaN stripe crystal on Si substrate by dual selective metal organic vapor phase epitaxy
- Special issue: Advanced plasma science and its applications for nitrides and nanomaterials
- Special issue Advanced plasma science and its applications for nitrides and nanomaterials
この論文をさがす
収録刊行物
-
- Japanese journal of applied physics : JJAP
-
Japanese journal of applied physics : JJAP 50 (1), 2011-01
Tokyo : The Japan Society of Applied Physics
- Tweet
詳細情報 詳細情報について
-
- CRID
- 1520572356998238592
-
- NII論文ID
- 40017446879
-
- NII書誌ID
- AA12295836
-
- ISSN
- 00214922
-
- NDL書誌ID
- 10947884
-
- 本文言語コード
- en
-
- NDL 雑誌分類
-
- ZM35(科学技術--物理学)
-
- データソース種別
-
- NDL
- CiNii Articles
