Observation of new isoelectronic trap luminescence in nitrogen δ-doped GaP
Bibliographic Information
- Other Title
-
- Observation of new isoelectronic trap luminescence in nitrogen d doped GaP
- Special issue: Solid state devices and materials
- Special issue Solid state devices and materials
Search this article
Journal
-
- Japanese journal of applied physics : JJAP
-
Japanese journal of applied physics : JJAP 48 (4), 2009-04
Tokyo : The Japan Society of Applied Physics
- Tweet
Details 詳細情報について
-
- CRID
- 1520572357152366208
-
- NII Article ID
- 40016559791
-
- NII Book ID
- AA12295836
-
- ISSN
- 00214922
-
- NDL BIB ID
- 10212373
-
- Text Lang
- en
-
- NDL Source Classification
-
- ZM35(科学技術--物理学)
-
- Data Source
-
- NDL
- CiNii Articles
