Analytical approach for enhancement of n-channel metal-oxide-semiconductor field-effect transistor performance with carbon-doped source/drain formed by molecular carbon ion implantation and laser annealing

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  • Analytical approach for enhancement of n channel metal oxide semiconductor field effect transistor performance with carbon doped source drain formed by molecular carbon ion implantation and laser annealing
  • Special issue: Solid state devices and materials
  • Special issue Solid state devices and materials

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